Molecular Beam Epitaxy (MBE) System

In our laboratory, there is a VG-Semicon V80H model Molecular Beam Epitaxy (MBE) system to grow III-V group semiconductor materials required for advanced technology. The MBE method is the process of obtaining high quality semiconductor crystals with atomic ratio precision. The ultra-pure substances in the source cells are evaporated and they are sent to a core crystal under high vacuum for growth. MBE system has a mass spectrometer. Thus, before the growth process, how much of which substance is in the growth chamber can be determined at the ppm level.